*simulator lang = spice
.MODEL P_CNT_TG PMOS( LEVEL=61

**removing temperature dependence**
+tnom=27
+kvt = 0
+kasat = 0

**process***
+VTO=0.2 $zero-bias threshold
+TOX=100e-9 	$dielectric thickness
+cgso = 2.5e-8    cgdo = 2.5e-8

**physics****
+EPS=1.5	$channel dielectric constant
+EPSI=5000	$insulator dielectric constant
+MUBAND=5e-4	$band mobility in m2/VS
**---leakage---****
+sigma0=50e-14 	$minimum leakage e-9
+IOL=10e-14	$zero-bias leakage
*===working=====
+lambda=0.001	$output conductance
+vaa=5		$characteristic voltage for field effect mobility
+GAMMA=0.1	$power law mobility parameter
+def0=0.6	$dark fermi level
+rd=0 rs=0	$drain/source resistance
+alphasat=0.7	$satuation modulation parameter	$cannot be 0?
+delta=30	$transition width parameter
*=====================
+VFB=0		$flatband voltage
+VGSL=-7		$VGS leakage dependency	$cannot be 0?
*===additional=========
+VDSL=7
+VMIN=0.001
+M=2.5
)





*simulator lang = spice
.MODEL N_CNT_TG NMOS( LEVEL=61

**removing temperature dependence**
+tnom=27
+kvt = 0
+kasat = 0

**process***
+VTO=0.7	$zero-bias threshold
+TOX=100e-9 	$dielectric thickness
+cgso = 2.5e-8    cgdo = 2.5e-8

**physics****
+EPS=1.5	$channel dielectric constant
+EPSI=5000	$insulator dielectric constant
+MUBAND=1.6e-4	$band mobility in m2/VS
**---leakage---****
+sigma0=50e-14 	$minimum leakage 
+IOL=20e-14	$zero-bias leakage
*===working=====
+lambda=0.001	$output conductance
+vaa=5		$characteristic voltage for field effect mobility
+GAMMA=0.1	$power law mobility parameter
+def0=0.6	$dark fermi level
+rd=0 rs=0	$drain/source resistance
+alphasat=0.7	$satuation modulation parameter	$cannot be 0?
+delta=60	$transition width parameter
*=====================
+VFB=0		$flatband voltage
+VGSL=7		$VGS leakage dependency	$cannot be 0?
+VMIN=0.001
+M=2.5
)


